作　　者： ; ; ; (周生辉）;

机构地区： 北京师范大学核科学与技术学院低能核物理研究所

出　　处： 《北京师范大学学报（自然科学版）》 1990年第1期13-18,共6页

摘　　要： 5×10^(16)cm^(-2)的As高注量注入Si时,瞬态退火过程中出现高密度缺陷.它是由超饱和As浓度的存在造成的,其分布随退火时间增加而展宽.这种缺陷在退火过程中导致奇异扩展的出现.As浓度分布在高密度缺陷区与单晶区交界处出现拐点.拐点深度随退火时间加长而变深.高密度缺陷扩展结果导致PN结漏电流增加.讨论了缺陷运动对PN结漏电流影响的机理. The results show that high defect density appears during RTA when As is implanted to a dose of 5×10^(16)cm^(-2). It is induced by oversatura- ted As concentration. The spreading of the defect distribution increases with increasing of RTA time. It is found that the strange diffusion is induced by the defects during RTA. That is, the kink appears on the curve of As concentr- tion profile. It is located between high defect density region and crystal region. The depth of the PN junction increases with increasing of annealing time. The spreading of high defect density leads to increase of PN junction leakage current. Finally, the mechanism of PN junction leakage current is discussed.

关 键 词： 离子注入 半导体 退火 结 漏电

领　　域： [理学] [理学]