作　　者： ; ; ; ; ;

机构地区： 浙江大学材料科学与工程学系硅材料国家重点实验室

出　　处： 《无机材料学报》 2006年第1期211-216,共6页

摘　　要： 利用喷雾热解法制备了p型铟锡氧化物透明导电薄膜．主要研究了铟含量和热处理温度对薄膜的晶体结构、导电类型和载流子浓度以及光吸收特性等的影响．结果表明,当In／Sn 比较小时,薄膜为金红石结构的二氧化锡,导电类型为n型;当In／Sn比在0．06-0．25范围内且热处理温度T≥600℃时,薄膜仍为金红石结构,但导电类型转为p型的;当In／Sn比超过 0．3时,薄膜中有立方相的In2Sn2O7-x生成,由于氧空位的存在,薄膜又转变为n型．因此要获得p型导电的铟锡氧化物薄膜,In／Sn比不宜过低,也不能过高．热处理温度对薄膜的导电类型也有影响,对于In／Sn=0．2的薄膜,温度低于550℃时薄膜为n型导电,但当热处理温度高于550℃时,由于In3+取代Sn4+,因此薄膜为p型导电．当热处理温度高于700℃时,薄膜中空穴浓度达到饱和数值为4×1018cm-3,与此同时,透射率在可见光范围内仍高达80％以上． P-type transparent conducting indium-tin oxide thin films were successfully prepared by spray pyrolysis and characterized by XRD, Hall and UV-Visible transmission spectra. The results show that with small In/Sn ratio, the films are in rutile SnO2 structure, and the films show n-type conductivity. With In/Sn ratio in the range of 0.06-0.25 and process temperature above 550℃, the films are still in rutile structure, but the conductivity type changes to p-type. For films with In/Sn ratio 〉0.3, conductivity type changes back to n-type. The process temperature is also an important parameter to the films. With In/Sn=0.2, the films show n-type for T 〈 550℃, and change to p-type for T 〉 550℃. The hole concentration saturates at T = 700℃, with hole concentration as high as 4×10^18cm^-3. Besides, all the films show transmission as high as 80% in the visible region.

关 键 词： 铟锡氧化物 透明导电薄膜 型导电 喷雾热解

领　　域： [理学] [理学] [理学] [理学]