作　　者： ; ; ; ;

机构地区： 华南理工大学理学院

出　　处： 《华南理工大学学报（自然科学版）》 2005年第12期92-95,104,共5页

摘　　要： 在斜坡电压应力条件下对GaAsMM IC介质层Si3N4的击穿特性进行了测试,探讨了电容面积、周长以及斜率对与时间有关的介质击穿(TDDB)特性的影响.实验结果表明,电容面积越大,周长越长,介质中的缺陷就越多,其击穿电压也就越低,可靠性越差.根据TDDB线性电场模型,采用不同斜率的斜坡电压应力测试数据预测了正常工作电压下的Si3N4寿命.与温度加速实验相比,文中所提方法快速、成本低廉. The breakdown characteristics of dielectric Si3N4 based on GaAs MMIC （Microwave Monolithic Integrated Circuit） were studied by using the ramped voltage-accelerated testing. The effects of the area and perimeter of capacitor, as well as the ramped rate on TDDB （Time Dependent Dielectric Breakdown） characteristics were also investigated. The results indicate that a greater area or a longer perimeter will result in more defects in the dielectric, thus causing much lower breakdown voltage and poorer reliability. According to the results of the ramped volt- age-accelerated testing with different ramped rates, the lifetime of silicon nitride capacitor at a normal working voltage was finally predicted based on the TDDB linear field model. It is concluded that, compared with the temperature-accelerated testing, the proposed method is of much faster speed and lower cost.

关 键 词： 击穿 寿命预测 氮化硅

领　　域： [电子电信]