机构地区: 浙江大学材料科学与工程学系硅材料国家重点实验室
出 处: 《半导体光电》 2005年第6期515-518,共4页
摘 要: 采用将反应物沉淀后涂层及高温固相反应,在石英玻璃衬底上沉积了Cu/Al原子比不同的P型透明导电铜铝氧化物。XRD分析结果表明,样品的成分中包含黑铜矿结构的CuO、铜铁矿结构的CuAlO2、尖晶石结构的CuAl2O4和刚玉结构的Al2O3;X光能谱(EDAX)测试结果表明,样品中的Cu/Al比例随原料中Cu/Al比的增加而增加;导电类型测试表明,利用本方法制备的样品均是P型;电阻率测试表明,当Cu/Al原子比在1.0~1.5变化时试样的电阻率较低,而且电阻率变化不大。 P-type transparent conducting copper aluminum oxide samples with different Cu/Al ratio were prepared by the sedimentation of cupric acetate and aluminum acetate at high temperature and solid-phase-reaction. X-ray diffraction results show that the powder samples consist of tenorite structured CuO, delafossite structured CuA102, spinel structured CuA1204and corundum structured Al2O3. EDAX analysis indicate that the actual Cu/A1 ratio in the samples increases with Cu/Al ratio in raw materials. Conducting type measurement results show that all the samples are p-type. The lowest and relative stable resistivity is obtained at the Cu/Al ratio of 1.0-1. 5.
领 域: [电子电信]