作　　者： ; ; ; ; ; ; ; ;

机构地区： 清华大学信息科学技术学院微电子学研究所

出　　处： 《半导体技术》 2006年第1期40-43,共4页

摘　　要： 通过在SiGe HBT外基区和多晶发射极上制作TiSi2,从而使器件的高频噪声系数得到进一步降低。以PD=200mW的SiGe HBT为例,采用TiSi2工艺的噪声系数典型值为F=1.6dB@1.1GHz,明显低于无TiSi2工艺SiGe HBT的2.0dB@1.1GHz,且频率越高,二者差别越大。 SiGe HBT with TiSi2 on the extrinsic base and polysilicon emitter is introduced. Based on the experiment, it is proved that the high frequency noise figure of SiGe HBT with TiSi2 can be decreased effectively. For SiGe HBTs Of PD=200mW, the typical noise figure of SiGe HBT with TiSi2 is 1.6 dB @ 1.1GHz, which is better than 2.0dB@ 1.1GHz of SiGe HBT without TiSi2. The experiments also show that the noise figure will be improved more obviously when SiGe HBT with TiSi2 is used in higher frequency.

关 键 词： 锗硅异质结双极晶体管 二硅化钛 微波 低噪声

领　　域： [电子电信]