作　　者： ; ;

机构地区： 泉州师范学院物理与信息工程学院物理系

出　　处： 《吉林师范大学学报（自然科学版）》 2005年第4期3-5,共3页

摘　　要： 制备一种利用4,4’-N,N’-dicarbazole-biphenyl(CBP)作为超薄空穴注入缓冲层．CBP作为一种较好 的缓冲材料,改善了有机发光器件的性能．CBP阻挡部分从阳极ITO注入到有机层NPB的空穴,从而平衡了空 穴和电子的注入．有缓冲层的有机发光器件比没有缓冲层有机发光器件的电流效率有了明显的提高．当缓冲层 CBP为4 nm时,最大电流效率在8 V时达到5．66 cd／A,这是没有缓冲层器件电流效率的近1．5倍． An ultra - thin hole - injection buffer layer using 4,4′- N, N′ - dicarbazole - biphenyl（CBP） in organic light -emitting devices has been fabricated. The CBP can be expected to be a good buffer layer material and thus enhance the emission performance of the organic light - emitting device. The CBP blocks part of the injected holes from the indium - tin - oxide （ITO） anode to the organic layer （NPB） and improves the balance of hole and electron injections. The current efficiency was comparatively improved compared with those of the device without the buffer layer. The highest luminous efficiency of the device with 4nm CBP act as buffer layer was achieved 5.66 cd/A, at 8V, which is nearly 1.5 times than that of the device without it.

关 键 词： 有机发光器件 缓冲层 电流效率

领　　域： [电子电信] [电子电信]