机构地区: 大连理工大学
出 处: 《功能材料》 2005年第10期1561-1563,1567,共4页
摘 要: 实验利用双放电腔微波-ECR等离子体源设备,采用复合PVD(physical vapor deposition)和PECVD(plasma enhanced chemical vapor deposition)的方法,先后在NiTi基体上沉积Si和Si/α-C∶H过渡层,然后制备类金刚石薄膜。Raman光谱和透射电镜表明制备的梯度薄膜是典型的类金刚石薄膜,划痕的测试结果表明,Si过渡层沉积时间影响着梯度类金刚石薄膜与NiTi合金基体之间的结合强度,当沉积时间在60min左右时可获得具有最好结合强度的梯度薄膜,而超过或低于这个时间值会导致膜基结合强度降低。 In this study, the twinned microwave ECR plasma source enhanced ion implantation system was used to prepared graded diamond-like carbon (DLC) film through hybrid physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD) methods. Graded films of Si/(Si/α-C : H)/DLC films were investigated. Raman spectra and TEM confirmed the diamond-like characteristics of as-received graded DLC films. The CSR-01 system was employed to obtain information about the scratch resistance of graded DLC films in different deposited time (20, 30, 60 and 90min, respectively). The test results showed that the Si graded layer deposited in 60 min provided the best adhesion strength between the graded DLC film and NiTi alloy substrate. There existed poor adhesion between graded DLC films and NiTi alloy substrate once the deposition time was above or under the value.