作　　者： ; ; ; ; ; ;

机构地区： 清华大学信息科学技术学院集成光电子学国家重点实验室

出　　处： 《Journal of Semiconductors》 2005年第10期2001-2005,共5页

摘　　要： 提出了一种新型低成本硅基过渡热沉,用以实现高达40Gb/s的高速光电子器件封装.采用高阻硅衬底作为热沉基底,制作出了0～40GHz范围内传输损耗小于0.165dB/mm的共面波导传输线.热沉中采用Ta2N薄膜电阻作为负载以实现器件的阻抗匹配,达到了0～40GHz范围内低于-18dB的宽带低反射特性.和传统硅基平台相比,新型硅基热沉更具有制作工艺简单、导热性能良好等优点.为了证明其实用性,热沉被应用于高速电吸收调制器的管芯级封装测试,获得了超过33GHz的小信号调制带宽特性,在硅基热沉上首次实现可用于40Gb/s系统的光电子器件. A novel low-cost wideband Si-based submount is proposed and fabricated for 40Gb/s optoelectronic devices. In the submount,a CPW transmission line is directly formed on a high-resistivity Si substrate and exhibits a transmission loss as low as 0. 165dB/mm up to 40GHz. The submount contains a Ta2 N thin-film resistor for impedance matching, and a low reflection coefficient of less than -18dB up to 40GHz is achieved. Such a configuration has the advantages of simplified fabrication procedures and efficient heat dissipation. As a demonstration,the Si-based submount is used in a high-speed electroabsorption （EA） modulator for chip-level packaging. The small-signal modulation bandwidth is measured to be over 33GHz,which is the first report of 40Gb/s optoelectronic devices on a Si-based submount.

关 键 词： 宽带硅基过渡热沉 高速电吸收调制器 高阻率硅衬底 低损耗共面波导 薄膜电阻

领　　域： [电子电信]