机构地区: 华南理工大学理学院微电子学系
出 处: 《电路与系统学报》 2005年第5期93-96,共4页
摘 要: 本文讨论了ESD保护器件GGNMOS(Gate Grounded NMOS)的栅长对其抗静电能力的影响,并用MEDICI进行仿真验证。基于仿真结果首次讨论了GGNMOS的栅长对其一次击穿电压、二次击穿电压和电流、导通电阻、耗散功率等的作用。 This paper discusses how the gate length of GGNMOS (Gate Grounded NMOS) affects its ESD robustness. Further analysis is conducted on the dependence of breakdown voltage, second breakdown voltage/current, turn-on resistance and dissipated power on gate length, based on MEDICI simulation.
关 键 词: 器件仿真
领 域: [电子电信]