作　　者： ; ; ;

机构地区： 天津大学精密仪器与光电子工程学院光电信息技术科学教育部重点实验室

出　　处： 《物理》 2005年第9期648-653,699,共7页

摘　　要： 文章评论性地介绍了金属有机化学气相外延技术(MOCVD)生长氮化物半导体GaN和InGaN以及激子局域化效应、量子束缚斯塔克效应对它们的光学性能的影响,详细比较了这两种效应对GaN基半导体发光二极管和激光二极管特性的影响,特别是量子束缚斯塔克效应以显著不同的方式影响着发光二极管和激光二极管的性能;文章还讨论了在A面蓝宝石衬底上生长GaN的情况. We review the influence of MOCVD growth conditions on the optical and crystal properties of GaN. The optical properties of InGaN are investigated in terms of carrier localization and quantum confined Stark effects. The influence of these two effects on the performance of light emitting diodes and laser diodes are compared in detail, from which we see that they differ significantly. Since A-face sapphire is now available in very large size it is attractingmuch attention as a substrate for electronic devices, and growth on such substrates is also reviewed.

关 键 词： 金属有机化学气相沉积外延 发光二极管 激光二极管 多量子阱 金属有机化学气相沉积 氮化物半导体 外延技术 生长

领　　域： [理学] [理学] [电子电信]