作　　者： ; ; ; ; (赵铁成）;

机构地区： 西北工业大学材料学院

出　　处： 《兵器材料科学与工程》 2005年第5期11-15,共5页

摘　　要： 采用射频磁控反应溅射法在蓝宝石和硅衬底上制备出Si3N4薄膜。利用XPS和FTIR分析了所制备薄膜的成分和结构,讨论了工艺参数对沉积速率的影响。结果表明,Si3N4薄膜的沉积速率随溅射气压的增大出现先增后减的趋势,衬底温度对沉积速率没有明显的影响。溅射气压的降低、衬底温度的提高将有利于获得高质量的Si3N4薄膜。 Si3N4 thin films have been prepared by radio frequency magnetron reactive sputtering method on sapphire and silicon substrate in this article. The composition and construction of the Si3N4 films were investigated by XPS and FTIR. At the same time, the influences of experiment parameters, such as sputtering pressure and substrate temperature, on the deposition rate were discussed. The results were as follows： the deposition rate firstly increases with increasing sputtering pressure, and then decreases ; the deposition rate reveals no obvious change with increasing substrate temperature; the excellent Si3N4 thin films can be prepared with decreasing sputtering pressure and increasing substrate temperature.

关 键 词： 磁控反应溅射 蓝宝石 氮化硅薄膜 沉积速率

领　　域： [理学] [理学]