作　　者： ; ; ;

机构地区： 西北工业大学材料学院

出　　处： 《半导体光电》 2005年第4期335-337,365,共4页

摘　　要： 研究了在60℃下大气中退火不同时间对Au/p-CdZnTe(CZT)欧姆接触特性的影响。通过I-V测试发现,退火2 h时,Au/p-CZT能得到较好的欧姆接触特性。用SEM和XPS进一步分析发现,在2 h退火过程中,Au大量向CZT体表层扩散,作为受主杂质占据Cd位,对CZT体表层进行了p型重掺杂,形成了M-p+-p型欧姆接触。Cd、Te在退火过程中几乎未向Au层扩散,Au在扩散过程中未与CZT中的元素形成任何化合物。同时,CZT侧面有27.01%的Te氧化成有钝化作用的TeO2。 The effect of different annealing time at 60℃ in air on the Ohmic contact of Au/p-CdZnTe（CZT） was investigated. By measuring I-V curves, it was found that Au/p-CZT had excellent Ohmic performance after 2 h annealing. From SEM and XPS analyses, Au was diffused into the CZT bulk during the annealing, and occupied the Cd sites as acceptors. Thus, heavy doped p-type layer was formed,and M-p^＋-p Ohmic contact was obtained. During the annealing,Cd and Te were hardly diffused into the Au layer and as-diffused Au didn＇t form any compounds with the elements in CZT bulk. At the same time,Te of about 27.01% in CZT profile was oxidated to form TeO2 with passivation action.

关 键 词： 欧姆接触 退火 功函数 掺杂 隧道效应

领　　域： [电子电信]