作　　者： ; ;

机构地区： 浙江大学

出　　处： 《物理学报》 1995年第1期57-63,共7页

摘　　要： 用X射线光电子能谱测量了经电解腐蚀后硅片表面的发光物质.发现发光膜中与发光有关的物质为硅氧化合物,其成分与二氧化硅接近,但O/Si小于2,并含有约百分之一数量级的氟,由氩离子刻蚀条件估算发光膜的厚度为微米数量级.随氩离子束的轰击,发光膜的发光强度下降,波长红移. Photoluminescence material Surface layer formed during electrical dissolution of silicon wafer in HF solution was studied with XPS depth profiling technique. The composition of this material is similiar to silicon dioxide with two exceptions; namly, it contains about 1% flourine; and the ratio O/Si is less than 2. The thickness of the photoluminescence material is in the order of 1mm. As the material is sputtered away by argon ion beam, the intensity of photoluminescence decreases, and the peak wavelength shows a red-shift.

关 键 词： 发光多孔硅 射线 光电子能谱 深度剖析

领　　域： [电子电信] [机械工程] [理学] [理学]