机构地区: 华南理工大学理学院应用物理系
出 处: 《华南理工大学学报(自然科学版)》 1995年第12期31-37,共7页
摘 要: 针对"传感器中毒"现象,在正面敏感的扩展电阻硅流量(SRSF)传感器的基础上,提出背面敏感的SRSF传感器,并设计出相应的表面贴装元件(SMC)封装形式。理论推导和测试结果表明:背面敏感的SRSF传感器的输出电压与流体流速、流向的关系可表述为:;芯片厚度对灵敏度影响很大,其最佳值为150μm。在最佳厚度下,背面敏感方式虽然牺牲了SRSF传感器的10%的灵敏度,但却能有效防止传感器中毒,SMC封装形式使背面敏感SRSF传感器的正、反流向对称性大大改善。 Based on the frontside-sensitive SRSF sensor(FSSRSF), the backside-sensitive SRSF sensor (BSSRSF) with relative package design is put forward to the phenominece of 'sensors being poisoned' in this paper. After the theory reasonning and sample testing, the result is: the relation between the BSSRSF's output voltage and the flowing velocity with different direction can be described as , and the chip thickness influence on the sensitivity apparently, the optimum value is 150μm. With the optimum value, the BS style will cause a 10% sensitivity lost, but it can prevent the sensor from being poisoned effectively, and with the SMC package design, the BSSRSF's symmetry is much better.