作　　者： ; ; ; ; ;

机构地区： 华南理工大学理学院应用物理系

出　　处： 《华南理工大学学报（自然科学版）》 1995年第12期9-17,共9页

摘　　要： 本文报道了一种用聚酰亚胺（ＰＩ）膜垫高扩展栅的聚偏氟乙烯（ＰＶＤＦ）压电膜－ＭＯＳ晶体管（ＰＥＧＰＯＳＦＥＴ）传感器单元结构。和一般ＰＯＳＦＥＴ结构相比，这种新结构大大减少了扩展栅电容（ＣＥＧ），明显地提高了器件灵敏度。详述了这种结构的制造过程，特别是ＰＩ膜制备条件对ＣＥＧ和器件性能的影响。当用５．２μｍ和８．７μｍ的ＰＩ膜作为扩展栅电极的绝缘层时，分别得到１１．３ｄＢ和１３．６ｄＢ的增益改善。这个结果和等效电路分析结果一致。这种新结构为采用成熟的ＩＣ工艺技术制作用于医学超声成象等领域的ＰＶＤＦ超声探测阵列传感器提供了一个崭新的途径。 A newly developed polyimide padded-extended-gate polyvinylidene fluoride MOSFET (PEG-POSFET) for integrated acoustic transducer arrays is investigated. The PEG-POSFET comprises a polyimide (PI) film used as a sl)acer for the extended gate electrode (EGTRO), which reduces the extended gate capacitance (CEG ) significantly and a large improvement in sensitivity compared with conventional POSFET was achieved. The fabrication of PEG-POSFET, especially the effect of the preparation conditions of PI on CEG and the performance of PEG-POSFET are described. Using 5. 2μm and 8. 7μm thick PI films as EGTRO dielectrics,about 11. 3dB and 13. 6dB improvements of sensitivity were obtained respectively, which match the predicted valuesbased on a simple model. These results enable the realization of integrated PVDF ultrasonic detector arrays for medical imaging applications using a low cost IC technology.

关 键 词： 传感器 聚偏氟乙烯 超声传感器 晶体管

领　　域： [理学] [理学] [一般工业技术] [电子电信]