作　　者： ; ; ; ; ; ;

机构地区： 中国科学技术大学物理学院物理系

出　　处： 《发光学报》 1995年第3期211-216,共6页

摘　　要： 用沸硫酸对多孔硅进行了处理，测量了它们的红外吸收光谱、光致发光光谱和发光衰减．对氢、氧的作用进行了讨论，发现氧的加入可使发光强度增加两个数量级，发光衰减变快．用三层发光模型对结果进行了讨论。 orous silicon(PS)was treated in boiling sulphuric acid,and its infrared spectra,photoluminescence(PL)and PL decay in the time range of nanosecond scale have been measured at room temgerature.It was demonstrated that both hydrogen and oxygen atoms could terminate silicon atoms as SI H and Si O bonds at the surface and make PS lumlnescence.Moreover,the incorporation of oxygyen atoms into silicon network made the PL intensity increase by two orders of magnitude,and the PL decay faster.he results are interpreted.bymeans ofthree-layer model for PL ofporous silicon.

关 键 词： 多孔硅 后处理 发光衰减 氧化处理

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