作　　者： ; ; ; ; ; ; (陈）;

机构地区： 大连理工大学

出　　处： 《大连理工大学学报》 1995年第5期623-627,共5页

摘　　要： 利用离子束辅助沉积（ＩＢＡＤ）技术制备ＴａＮ薄膜；掠入射的Ｘ射线衍射和透射电镜观察结果显示，薄膜晶粒细小、结构致密，是面心立方结构。俄歇深度分析表明，薄膜由均匀层和混合过渡层两个区域组成，ＸＰＳ得出薄膜主要以ＴａＮ形式存在；薄膜电阻稳定，不随温度变化。膜基结合性能好，膜内应力小；２５ｋｅＶ能量离子轰击制得薄膜内应力最小，结合最好。 The tantalium nitride films are prepared by ion beam assisted deposition (IBAD).The results of X-ray diffraction (XRD) and transmission electron microscopy show that the filmspossess fcc structure and very small grain size. The composition depth profiles obtained by Augerspectroscopy (AES) show that the composition in the films is uniform and a wide interface can beobserved. X-ray photoelectron spectroscopy analyses show that the films are mainly composed ofTaN. The resistance of films is stable and does not alter with temperature. The adhesion of filmsare strong. The residual stresses of films analysed by XRD are smaller than those in the filmsobtained by other preparation methods.

关 键 词： 薄膜 氮化钽薄膜 离子束辅助沉积 制备

领　　域： [理学] [理学]