作　　者： ; ; ; ; ; ; (谭健华）;

机构地区： 中山大学物理科学与工程技术学院物理系

出　　处： 《Journal of Semiconductors》 1995年第10期730-735,共6页

摘　　要： 我们制备了Ｍ＝２，４，６和１０的一系列短周期（ＧａＡｓ）Ｍ／（ＡｌＡｓ）Ｍ厂超晶格样品并测量了其椭偏光谱．对这些样品的光频介电函数港进行了分析，并与夏建白等的理论计算结果作了直接比较上述理论计算是对Ｍ＝４，６和１０的超晶格样品作出的，并给出相应的介电函数谱曲线．在光子能量３．５～４．５ｅＶ范围的Ｅ１峰与瓦峰附近的实验谱的主要特征，与理论计算结果相一致实验谱中的Ｅ１峰比理论谱要强些，不同Ｍ值的超晶格样品之间的Ｅ１峰之差异也大于理论结果。 Abstract Ellipsometric spectra of a series of short-period (GaAs)M/(AlAs)M superlattices with M=2,4,6,10 have been measured. The dielectric function spectra of these samples are directly analysed and compared with the theoretical results for the superlattices with M=4,6,10 calculated by Jian-Bai Xia and Yia-Chung Chang.The main features of the experimental spectra near the E1 and E1 peaks in the 3.5-4.5eV range are consistent with results of thoretical calculation.The E1 peaks in the measured spectra are stronger than those in the theoretical results,and the difference of E1 peak between superlattices of different M is also larger for the experimental results.

关 键 词： 砷化镓 砷化铝 超晶格 介电函数谱 光谱

领　　域： [电子电信]