作　　者： ; ; ; ; ; ; ;

机构地区： 汕头大学理学院物理系

出　　处： 《物理学报》 2005年第8期3805-3809,共5页

摘　　要： 对以SiH4/H2及SiCl4/H2为源气体、采用等离子体增强化学气相沉积技术制备的非晶硅薄膜和多晶硅薄膜进行了光照稳定性的研究.实验表明,制备的多晶硅薄膜并没有出现非晶硅中的光致衰减现象,其光电导、暗电导在光照过程中没有下降反而有所上升且电导率变化快慢受氢稀释度的制约.多晶硅薄膜的光照稳定性可能来源于高的晶化度及Cl元素的存在. We have studied the stability of amorphous silicon and polycrystalline silicon films under illumination. These films are prepared by plasma-enhanced chemical vapor deposition technology from SiH_4/H_2 and SiCl_4/H_2 separately. The experiment indicates that the light-soaking degradation phenomenon, which exists in almost all amorphous silicon films, does not appear in the polycrystalline silicon films. The light-dark conductivity of polycrystalline silicon films does not decrease but increase during light irradiation. Furthermore, the variance of conductivity depends on hydrogen dilution ratio. It is suggested that the persistent photoconductivity effect of polycrystalline silicon films may originate from the high crystallinity and the action of chlorine.

关 键 词： 多晶硅薄膜 光照稳定性 化学气相沉积技术 气源 等离子体增强 非晶硅薄膜 源气体 光电导 晶化度 稀释度 电导率 制备 衰减

领　　域： [电子电信] [轻工技术与工程] [轻工技术与工程]