机构地区: 四川大学
出 处: 《人工晶体学报》 2005年第3期505-508,共4页
摘 要: 在同一安瓿中一次性合成、生长出了外形完整、无裂纹的AgGaS2单晶体,尺寸达10mm×20mm。并进行了X射线能谱元素分析,测定了AgGaS2多晶粉末衍射谱,以及单晶体的红外透射谱,同时得到了(112)、(024)面的X射线单晶衍射谱,结果表明生长的单晶体可用于器件研究。 A new method with descending crucible has been suggested for synthesizing and growing a high quality AgGaS_2 crystal in one ampoule. A crack-free AgGaS_2 single crystal with 10mm in diameter and 20mm in length was grown by the technique above mentioned. The results show that the as-grown AgGaS_2 crystal can be used in the device research by measured EDAX spectrum, infrared transmission spectrum and XRD spectra.