机构地区: 中国石油大学华东物理科学与技术学院
出 处: 《青岛大学学报(自然科学版)》 2005年第2期65-70,共6页
摘 要: 微小器件内杂质原子的存在是影响电流分布的主要因素之一.本文研究了电子波导中单个杂质原子对电流分布的影响.基于薛定谔方程,得到了电子在准一维电子波导中单个杂质所在界面处的精确的相位相干电子输运图像.描绘了电流密度的分布图.发现杂质势为吸引势和排斥势时对电流密度分布的影响是不同的。在杂质势为吸引势时,在杂质原子周围产生了明显的涡流,并且涡流强度随杂质势的强度而变化,但在杂质势为排斥势时涡流并没有出现.涡流出现是量子相干散射造成的,并与衰减模式的存在有重要关系.本文还研究了波导宽度以及杂质原子的位置对电流分布的影响. The current distribution around a single impurity in a planar quantum wires is studied in this paper. Based on Schrdinger equation we obtain the vigorous result of phasecoherent electronic transport through a single interface in quasionedimension electron waveguide. By plotting the picture of the distribution of current density we find a dramatic result. The effect of attractive potential on the current distribution is different from that of repulsive one. The attractive potential can produce vortices around the impurity and the strenth chauge of the vortices follows the strenth chang of the potential,but there are not any vortices produced by the repulsive potential. The vortices are caused by quantummechanical inference scatterers and are accentuated by evanescent states. We also inspect the influences for both the width of strap and the position of the impurity,on the current distribution.