作　　者： ; ; ; ; ;

机构地区： 西安建筑科技大学材料科学与工程学院

出　　处： 《功能材料与器件学报》 2005年第2期202-206,共5页

摘　　要： 以SnCl4·5H2O和NH4F为原料,采用喷雾热分解的方法在片状日用玻璃基材和石英玻璃基材上制得了掺氟氧化锡透明导电薄膜。采用X射线衍射仪(XRD)和扫描电镜(SEM)分别对薄膜的内部结构和表面形貌进行了表征。研究了F-的掺杂量、喷涂温度、沉积时间和热处理对薄膜方阻R□的影响。实验结果表明,当犤NH4F犦/犤SnCl4·5H2O犦=32wt%、成膜温度为450℃、喷涂时间为15s时,可使所得薄膜的方阻R□达最低,为10Ω/□。 By using SnCl4 · 5H2O and NH4F as raw materials, the Fluorine-doped SnO2 thin films were prepared on the soda-lime glass and quartz glass flat substrates by spray pyrolysis process. The crystal structure and surface morphology of the thin films were characterized by using XRD and SEM. The effects of F- contents, deposition temperature, deposition time and annealing treatment on the sheet resistance of the thin films were investigated. The results show that the R [euro] of the F- doped SnO2 thin films can reach to 10 Ω/ [euro] , when [NH4F]/[SnCl4 · 5H2O] in the initial is solution 32wt% and deposited for 15 s at 450°C.

关 键 词： 掺氟二氧化锡薄膜 喷雾热分解 制备 导电性能

领　　域： [一般工业技术] [理学] [理学]