作　　者： ; ; ; ; ;

机构地区： 东北大学

出　　处： 《材料科学与工程学报》 2005年第3期341-344,共4页

摘　　要： 应用DC(直流 )反应磁控溅射设备在硅基底上制备TiO2 薄膜 ,在固定的电源功率下 ,氩气流量为 4 2 .6sccm ,氧流量为 15sccm ,溅射时间为 30分钟的条件下 ,通过控制温度改变TiO2 薄膜的光学性质。应用n&kAnalyzer 12 0 0测量 ,当温度增加时薄膜的平均反射率降低同时反射低谷向长波方向移动 ;温度对消光系数k影响不大 ;当温度低于180℃薄膜的折射率变化不大 ,当温度达到 2 4 0℃左右时薄膜的折射率明显降低。通过XRD和SEM表征发现 ,随着温度的增加TiO2 的晶体结构由混晶变为单一的锐钛矿相 ,薄膜表面的颗粒由多变少 ,表面形貌由粗糙多孔变得细腻平滑。 The titanium dioxide films were sputtered on silicon substrates by DC reactive magnectron sputtering. With the deposition condition of constant power, 30 minutes duration, Ar and O_2 flow of 42.6 and 15sccm, the relationship of optical properties of TiO_2 films with deposition temperatures was studied. The n&k Analyzer 1200 measurement results show that with increasing of temperature the average reflectance value decreases and the minimum reflectance point moves towards red direction. Furthermore, temperature has little effect on the extinction coefficient (k). However, the refractive index value decreases remarkably when the temperature reaches about 240℃, but it does not change much when the temperature is below 180℃. XRD and SEM characterization results demonstrate that with increase of temperature the crystal structure of TiO_2 films changes from mixing phase to single anatase phase, with rough and porous surface changing to smooth and the number of grain on the surface turning out to be less.

关 键 词： 二氧化钛薄膜 直流反应磁控溅射 温度 反射率

领　　域： [理学] [理学]