机构地区: 浙江大学材料科学与工程学系硅材料国家重点实验室
出 处: 《Journal of Semiconductors》 2005年第4期721-725,共5页
摘 要: 利用溶胶凝胶提拉法在石英玻璃衬底上制备出吸收边波长位于地球表面太阳光谱日盲区(240~280nm)内的MgxNi1-xO薄膜.XPS和XRD结果显示,MgxNi1-xO在1000℃下形成具有立方结构的固溶体;紫外可见吸收谱结果表明,MgxNi1-xO吸收边随着Mg含量的变化而发生改变,当Mg含量x在0.2~0.3之间时,薄膜的吸收边波长在248~276nm范围内可调;光电响应测试结果表明,MgxNi1-xO薄膜(x=0.3)对太阳光不敏感,而对波长为254nm的紫外光具有很好的光电导特性,光照前后薄膜电阻变化率达40%,因此,我们可以认为MgxNi1-xO(x=0.2~0.3)薄膜材料有望应用于日盲区的紫外探测. To research a novel solar-blind material,Mg_xNi_ 1-xO thin film with absorption edges in the solar-blind region (240~280nm) is successfully prepared on quartz substrates by sol-gel method followed by post annealing at different temperatures.The films are characterized by XPS,XRD and UV-vis spectra measurements.The results show that Mg_xNi_ 1-xO(x=0~0.3) films with cubic NiO structure are formed at 1000℃ and the absorption edges of the films varied as the amount of Mg changed.The Mg_xNi_ 1-xO films with x=0.2~0.3 show absorption edges in the range of 248nm to 276nm,which is in the solar-blind region.The photoresponse results show that for Mg_ 0.3Ni_ 0.7O thin film it is not sensitive to the sunlight,but is very sensitive to the 254nm ultraviolet radiation,with change in resistance up to 40%.