作　　者： ; ; ; ; ; ; ; ; ;

机构地区： 四川大学材料科学与工程学院材料科学系

出　　处： 《人工晶体学报》 2005年第1期52-55,共4页

摘　　要： 从理论和实验上对AgGaS2 晶体生长中易产生裂纹甚至开裂的现象与其热应力、晶体尺寸以及温度梯度、生长速率等生长参数之间的关系进行了研究。结果表明:晶体产生裂纹甚至开裂与生长速率、坩埚旋转速率、冷却速率所造成的热应力和热应变有关。采用改进的Bridgman法成功地生长出尺寸为12mm×30mm无裂纹的AgGaS2单晶体,给出了制备无裂纹、大尺寸AgGaS2 晶体的较佳生长工艺参数。 This paper studies the relationship between the phenomenon of crack and the thermal stress in the AgGaS2 crystal. On this basis, the parameters of crystal growth such as temperature gradient and the rate of growth, the size of single crystal etc. were also considered, both theoretically and experimentally. The results indicate that the crystal crack is related to the thermal stress and strain which cause by the growth rate, cooling and rotation of the crucible. The preferable technical parameters for growing AgGaS2 single crystal with crack-free and large size are presented. A integral AgGaS2 single crystal with diameter of 12 mm and the length of 30 mm was obtained by the modified Bridgeman method.

关 键 词： 晶体 法 单晶体 大尺寸 裂纹 生长参数 温度梯度 晶体尺寸 旋转速率 制备

领　　域： [理学]