作　　者： ; ; ; ; ;

机构地区： 东北大学

出　　处： 《真空科学与技术学报》 2005年第1期65-68,共4页

摘　　要： 用DC(直流 )反应磁控溅射设备在硅基底上制备TiO2 薄膜 ,在固定电源功率、氩气流量 4 2 .6sccm、氧流量 15sccm、溅射时间 30min的条件下 ,通过控制总气压改变TiO2 薄膜的光学性质。应用n&kAnalyzer12 0 0测量 ,当总气压增加时薄膜的平均反射率降低 ,同时反射低谷向短波方向移动 ,总气压对消光系数k影响不大 ;随着总气压的增加薄膜的折射率出现了下降的趋势 ,但当总气压达到一定量值时折射率的变化趋于稳定。通过XRD和SEM表征发现 ,随着总气压的增加TiO2 的晶体结构由金红石相向锐钛矿相转变 ,薄膜表面的颗粒度大小由粗大变得微小细密。 Titanium dioxide film was grown on silicon substrate by DC reactive magnetron sputtering. The film was studied with X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results show that the total gas pressure significantly affects the optical properties of the film grown. For example, as the pressure increases, the average reflectance of the film decreases with its low reflectance valley shifting towards short wavelength, but its extinction coefficient (k) remains unchanged. Moreover, the refractive index decreases until a given total pressure is reached. XRD and SEM analyses reveal that as the pressure increases, phase transition of TiO2 from rutile to anatase occurs and reduction of grain size on the film surface is also observed.

关 键 词： 薄膜 光学性质 直流反应磁控溅射 折射率 气压 晶体结构 硅基底 短波 对消 反射率

领　　域： [一般工业技术] [理学] [理学]