作　　者： ; ; ; ; (邵正南）;

机构地区： 华南理工大学理学院应用物理系

出　　处： 《华南理工大学学报（自然科学版）》 1994年第5期53-57,共5页

摘　　要： 本文分析了ＰＯＳＦＥＴ压电传感器的结构参数与特性。理论分析表明ＰＶＤＦ薄膜的声学灵敏度与膜的厚度和膜的弹性刚性系数成正比。实验结果显示，ＰＯＳＦＥＴ传感器的输出峰值随扩展栅面积的增加而增大，随沟道长度的减小而增大。ＰＯＳＦＥＴ传感器的灵敏度比之ＰＶＤＦ直接粘贴硅背衬传感结构提高了２０ｄＢ。 In this paper, the characteristics of POSFET piezoelectric sensors construceted by covering the MOS transistor with polyvinylidne fluoride film ate reported. Theoretical results show that the piezoelectric sensing sensitivity of PVDF film is proportional to film thickness and inversely proportional to the elasticity constant S. Experimental results reveal that the peak value of the output voltage of POSFET increases with extended gate area and decreases as the channel length increases. The ultrasonic sensing sensitivity of POSFET piezoelectric sensors is of 20dB larger than that of the sencors without MOS device backing.

关 键 词： 聚偏聚乙烯膜 压电传感器 自动控制

领　　域： [自动化与计算机技术] [自动化与计算机技术]