作　　者： ; ; ; ; ; (刘玉奎）; (张正元）;

机构地区： 重庆大学光电工程学院

出　　处： 《光学精密工程》 2004年第6期603-607,共5页

摘　　要： 提出了一种带过载保护功能的真空微电子压力传感器。对传感器的压力敏感膜尺寸、阴阳极间距等结构参数进行了分析计算;针对过载保护的问题,在结构上设计了过载保护环,实现了真空微电子压力传感器的过载自保护功能。采用硅的干、湿法结合的腐蚀、氧化锐化和真空键合等工艺技术,成功地研制出传感器实验样品。对传感器实验样品的参数进行了测试分析,其场致发射阴极锥尖阵列密度达24000个/mm2,起始发射电压为0.5～1V,反向电压≥25V,当正向电压为5V时,单尖发射电流为0.2nA,压力灵敏度为0.1μA/KPa。 A vacuum micro-electronics pressure sensor with the function of overloading protection is brought forward. The analysis and calculation on some structure parameters of the sensor have been done, such as the dimension of pressure sensitive film, the space length between anode and cathode and so on. As to overloading protection, there is a protection ring. Combining of silicon dry corrosion, wet corrosion, oxidizing sharpening and vacuum bonding techniques, a novel vacuum microelectronic pressure senor was developed. Then, a series of parameters of this sensor has been analized and tested. As a result, the density of field emission tip array reaches 24 000 units per mm^2, the start emission voltage is between 0.5 V to 1 V , the reverse voltage is over 25 V.When the positive voltage is 5 V, the unicuspid emission current is 0.2 nA,pressure sensitivity is 0.1 μA/KPa.

关 键 词： 压力传感器 过载保护 场致发射阴极锥尖阵列 各向异性腐蚀

领　　域： [自动化与计算机技术] [自动化与计算机技术]