作　　者： ; ; ; ; ; ;

机构地区： 中国科学院金属研究所

出　　处： 《金属学报》 2005年第1期84-88,共5页

摘　　要： 采用磁控溅射技术制备了ZnO:Al(ZAO)薄膜.研究了不同的工艺参数对薄膜的组织结构和光电特性的影响.实验结果表明,多晶ZAO薄膜具有(001)择优取向且呈柱状生长,能量机制决定其微观生长状态.讨论了薄膜的内应力,高的沉积温度和低的溅射功率可有效减小薄膜的内应力.优化的ZAO薄膜电阻率和在可见光区的平均透射率可分别达到3×10-4-4×10-4Ω·cm和80％以上. Al-doped ZnO(ZAO) layers have been prepared by reactive DC magnetron sputtering from Zn:2.0%Al (mass fraction) alloy target on glass and silicon wafer substrates. The influences of the deposition parameters on the crystallization behavior as well as electrical and optical properties of ZAO films have been investigated. The crystallinity of the films was improved and the columnar crystalline growth became dominant as the substrate temperature increased. All the films show a compressive stress, which increased as the DC power increased, while it decreased as the substrate temperature was raised. Optical transmittance up to 80% in the visible range and electrical resistivity as low as 3 x 10(-4) - 4 x 10(-4) Omega (.) cm were obtained under optimal deposition conditions.

关 键 词： 直流反应磁控溅射 薄膜 生长机制 光电特性

领　　域： [一般工业技术]