机构地区: 华南师范大学光电子材料与技术研究所
出 处: 《量子电子学报》 2004年第6期859-862,共4页
摘 要: 利用LP-MOCVD生长了不同周期的AlGaInP/GaInP MQW样品,并测量了它们的拉曼光谱。由于样品包括了掺杂的电流扩展层和欧姆接触层以及上、下限制层,拉曼光谱中观察到了与掺杂有关的耦合电子(空穴)气-纵光学声子模。根据喇曼光谱的选择定则,结合光致发光谱,发现AlP-LO/TO的相对强度比可以评定晶体AlGaInP MQW的生长质量。 AlGalnP/GalnP MQW samples of different numbers of wells were grown by LP-MOCVD and their Raman spectra were measured. Because of the doped current spreading layer, Ohm touching layer, top confining layer and bottom confining layer, coupled elec-tron(hole) -plasmon-LO-phonon modes are observed in Raman spectra. According to the Raman selection rule and the PL measurement, it is reasonable to evaluate the quality of AlGalnP/GalnP MQW by analyzing the relative intensity ratio of A1P-LO/TO.