作　　者： ; ; ; ; ;

机构地区： 中国科学院上海光学精密机械研究所

出　　处： 《光学学报》 2004年第11期1450-1454,共5页

摘　　要： 借助于原子力显微镜研究了离子束溅射沉积工艺中入射离子能量对制备的Ti薄膜表面形貌的影响。对薄膜表面高度数据进行相关运算 ,发现在此工艺条件下制备的薄膜具有典型的分形特征 ,利用分形表面高度高度相关函数的唯象表达形式对不同能量下制备Ti薄膜表面的高度相关函数进行拟合 ,得到了薄膜表面的分形维数、水平相关长度、标准偏差粗糙度等参量。研究发现 ,入射Ar离子能量在 30 0～ 70 0eV之间薄膜表面的粗糙度随着沉积粒子的能量增加而增大 ,分形维数随着入射离子能量的增加而减少。另外 ,在得到的分形维数基础上对不同溅射电压下Ti薄膜的生长机制进行了初步研究。 Titanium thin films have been prepared on borosilicate glass (BK7) substrates by ion beam sputtering technique with different voltage of sputtering, and the effect of energy process on the surface morphology is studied with the help of atomic force microscopy (AFM). Numerical correlated calculations show that the surface morphology appears to be fractal under these deposition conditions. Based on the fitting of height-height correlation functions of thin films to the phenomenological formula of fractal surface, the parameters such as fractal dimension, lateral correlation length and interface width are all obtained. The results show that the interface width increases but the fractal dimension decreases with the energy of incident Ar ions when the voltage of the sputtering is between 300 V and 700 V. Furthermore, the growth mechanism is studied based on the obtained fractal dimension under the different voltage of sputtering.

关 键 词： 钛薄膜 粒子 离子能量 表面形貌 相关长度 离子束溅射 分形维数 相关函数 参量 沉积工艺

领　　域： [理学] [理学] [电子电信]