作　　者： ; ; ; ; ;

机构地区： 西安建筑科技大学材料科学与工程学院

出　　处： 《硅酸盐学报》 2004年第9期1157-1160,共4页

摘　　要： 以SnCl4·5H2O,SbCl3和ZnO为原料,采用喷雾热分解法在石英和陶瓷基材上制得了阻温特性良好的掺杂的SnO2导电发热薄膜。用X射线衍射,扫描电镜对薄膜进行了结构表征。研究了Sb,Zn的不同掺杂浓度及热处理温度对薄膜电阻特性的影响。实验结果表明:当三氯化锑和氧化锌掺量摩尔分数分别为8.2%和17%时,薄膜的方阻R□为32Ω/□。 The doped SnO_(2) thin films with well resistancetemperature characteristic were prepared on quartz glass tube and ceramics substrates through spray pyrolysis process by using SnCl_(4) ·5H_(2)O,SnCl_(3) and ZnO as raw materials. The structure and surface morphology of the thin films were characterized by means of XRD and SEM. The effects of Sb and Zn doping contents and the annealing treatment on resistance of the SnO_(2) thin films were studied. Result shows that the R_□ of the doped SnO_(2) thin films can reach to 32Ω/□ when the doping molar fractions of Sb and Zn are 8.2% and 17% respectively.

关 键 词： 氧化锡薄膜 喷雾热分解 电热特性

领　　域： [理学] [理学]