机构地区: 华中科技大学
出 处: 《半导体技术》 2004年第11期22-25,共4页
摘 要: 在MEMS微加工和实验过程过程中,出于制造成本、光刻胶性能的考虑,需要选用合适的光刻胶。本文介绍了常用的正性胶和负性胶以及其曝光、显影的过程,正性胶和负性胶曝光过程漫射的图形缺陷。比较了正性胶和负性胶的各种性能以及各种光刻方式下选用的正负性胶及它们的光刻灵敏度,为微加工过程和实验操作提供指导。 In process of micromachining and experiment, because of conclusion of cost andcharacteristic, it needs to select appropriate photoresists. Commonly used positive resists andnegative resists and their exposure, development and edge-scattered radiation are introduced, theircharacteristics are compared, some common positive and negative resists employed in various li-thography strategies as practical guide for selection of a resist tone in micromachining and experi-ment process are listed.
领 域: [电子电信]