机构地区: 清华大学信息科学技术学院微电子学研究所
出 处: 《半导体技术》 2004年第11期19-21,共3页
摘 要: 采用正交试验法对二手RIE刻Al设备A-360进行工艺参数选择试验,并以均匀性、刻蚀速率、对PR选择比为评价指标。试验中发现RF功率是影响各评价指标的最主要因素。通过进一步优化工艺,制定出了均匀性小于3%,刻蚀速率高于300nm/min,对PR选择比好于1.8的刻Al实用工艺。 Reactive ion etching (RIE) of Al-Si alloy was performed in order to select etchingparameters for the second hand equipment of A-360. The experiments were designed by means ofTaguchi method with uniformity, etching rate, and PR selectivity as evaluating indicators. In theexperiments, RF power was found to be a main factor which strongly affects three evaluating indica-tors . After chosen etching parameters properly, optimal etching procedures get uniformity<3%,etching rate>0nm /min, PR selectivity>8.
领 域: [电子电信]