作　　者： ; ; ; ; ;

机构地区： 华中科技大学

出　　处： 《微电子学》 2004年第5期489-492,共4页

摘　　要： 　介绍了研究集成电路互连线电迁移的两种方法:加速寿命试验和移动速度试验。对加速寿命试验进行了分析和评价。分析表明,加速寿命试验方法存在高应力条件与正常工作条件下互连线电迁移中金属离子扩散机制不同、BLACK方程的使用范围有限、受试件特殊结构影响和电阻温度系数TCR随温度变化等问题。介绍了一种改进方法。详细介绍了移动速度试验,指出了其在互连线电迁移研究中的应用。 Two main methods, accelerated lifetime test and drift velocity test, to study electromigration are described. First, the accelerated lifetime test is analysed and evaluated. It has been shown that there exist some pitfalls in the accelerated lifetime test, such as different atom diffusion mechanism under high stress condition and for normal operations, limited applications of BLACK equation, effects of special test structure on test results and variation of temperature coefficient of resistors(TCR). An improved method is presented. And finally, the drift velocity test is dealt with in detail, and its application to the study of electromigration in IC interconnects is described.

关 键 词： 集成电路 互连线 电迁移 加速寿命试验 移动速度试验

领　　域： [电子电信] [电子电信]