机构地区: 华中科技大学
出 处: 《半导体技术》 2004年第9期15-21,38,共8页
摘 要: 随着大规模集成电路的不断发展,电迁移引起的集成电路可靠性问题日益凸现。本文介绍了电迁移的基本理论,综述了集成电路互连引线电迁移的研究进展。研究表明,互连引线的尺寸、形状和微观组织结构对电迁移有重要影响;温度、电流密度、应力梯度、合金元素及工作电流模式等也对电迁移寿命有重要影响。同时指出了电迁移研究亟待解决的问题。 With the development of large-scale integrated circuits, the reliability caused byelectromigration becomes a key issue. The fundamental of electromigration is introduced. The recentprogress in research on electromigration is overviewed. The results show that the size, shape andmicrostructure of interconnect metallic line play an important role in the process of electromigration.Also the temperature, current density, stress gradient and alloy elements have strongly effects onMTF (mean time to failure) of electromigration. Finally, the imminent issues of electromigration havebeen presented.
关 键 词: 大规模集成电路 互连引线 电迁移 可靠性 电流密度 应力梯度
领 域: [电子电信]