机构地区: 清华大学
出 处: 《半导体光电》 2004年第5期380-383,387,共5页
摘 要: 利用等离子体增强化学气相沉积(PECVD)技术制作半导体有源器件端面减反膜的方法简单易行,且适合进行大规模在片制作。采用1/4波长匹配法对减反膜的折射率、膜厚及其容差进行了理论设计,并在选定折射率下,对PECVD的沉积速率进行了测量。在此基础上,制作了1.31μmInGaAsP氧化膜条形结构超辐射发光二极管,通过测定输出光谱调制系数的方法确定出减反射膜的反射率为6.8×10-4,并且具有很好的可重复性。 A simple method to make antireflection (AR) coatings on semiconductor laser facets using plasma enhanced chemical vapor deposition (PECVD) is proposed.Key parameters of single-layer AR coating,including the refractive index n and the layer thickness h,are designed.The tolerances of n and h to maintain a power reflectivity less than 10^(-3) have been determined to be Δn = ±0.04 and Δh = ±6 nm, respectively.AR coating with reflectivity of 6.8×10^(-4) has been demonstrated using SiN_x film deposited by PECVD.The reflectivity is accurately measured.An AR-coated 1.31 μm InGaAsP superluminescent diode with oxide stripe structure has been successfully developed.
关 键 词: 减反射膜 等离子体增强化学气相沉积 低反射率
领 域: [电子电信]