作　　者： ; ; ; ; ; ; ;

机构地区： 华南师范大学物理与电信工程学院

出　　处： 《固体电子学研究与进展》 2004年第3期386-389,共4页

摘　　要： 应用感应耦合等离子体技术首次实现了对锑化铟薄膜的干法刻蚀。朗缪尔探针诊断结果表明 :射频电源功率为 2 0 0 W时 ,在刻蚀样品附近的等离子体离子密度最大达 6.71 70× 1 0 1 0 cm- 3。以 CCl F2 为刻蚀气体 ,进气流量 2 m L/min,RF功率 2 0 0 W,等离子体反应刻蚀运行气压 7.98Pa时 ,对 In Sb-In薄膜进行了感应耦合等离子体干法刻蚀 ,获得刻蚀图形 ,宽深比为 Inductively coupled plasma was first used to dry etch of InSb thin film. The electron temperature and ion density were diagnosed in the plasma dry etching experimental application by a Langmuir single probe. The rules of the electron temperature and ion density varying with air pressure, radio frquency and axes position were obtained. When RF power was 200 W, the maximal plasma density was 6.717 0×10^(10) cm^(-3) near the wafer. InSb thin film was etched by CCl_2F_2plasma. The ratio of width and depth was 5.

关 键 词： 干法刻蚀 等离子体 锑化铟薄膜

领　　域： [自动化与计算机技术] [自动化与计算机技术]