作　　者： ; ; ; ; ; ; ;

机构地区： 深圳大学材料学院深圳市特种功能材料重点实验室

出　　处： 《半导体技术》 2008年第S1期315-318,共4页

摘　　要： 采用磁控溅射技术,制备了Co掺杂ZnO薄膜,然后将样品分别在O2和N2气氛下以不同的温度进行退火处理;用X射线衍射图分析薄膜的结构,采用四探针法测量薄膜的方块电阻,利用振动样品磁强计测量薄膜的磁性能。结果表明,样品在退火温度较低(<300℃)时,电阻稍有下降;当温度升高到400℃时,电阻大幅度上升,而且O2气氛下退火比N2下升高幅度大得多。同一温度下,样品在O2气氛下退火的最大磁化强度比在N2气氛下退火的要低;同一退火气氛下,样品的最大磁化强度随退火温度的升高而降低,这是由于不同气氛和温度下退火时,薄膜中氧空位浓度发生变化,从而导致其电磁性能的差异。 Co-doped ZnO thin films were prepared by magnetron sputtering technology.The samples were annealed at different temperatures and in different atmosphere(O2 and N2),respectively.The crystal structure was analyzed by XRD,and the resistance was measured by four-point probe method,and the ferromagnetic properties were tested by vibrating sample magnetometer.It is found that the resistance of the samples slightly decreases with the increases of temperature,however it greatly increases when the annealing temperature reaches 400 ℃.And the sample resistance is much higher under O2 atomspere than N2 atomsphere.The maximum magnetization decreases with the annealing temperature and it is lower in O2 annealing than in N2 annealing at the same temperature.It is suggested that the above electric and magnetic behaviors are due to the change of oxygen vacancies when the annealing is performed at different temperatures and in different atmosphere.

关 键 词： 磁控溅射 掺杂 退火 铁磁性 电磁性能

领　　域： [理学] [理学]