作　　者： ; ; ; ; ;

机构地区： 华南理工大学机械与汽车工程学院广东省金属新材料制备与成形重点实验室

出　　处： 《材料工程》 2009年第S1期139-141,145,共4页

摘　　要： 以钛粉、硅粉和石墨粉为原料,通过无压烧结法制备了Ti3SiC2-SiC块体复合材料。利用X射线衍射仪对制得的样品进行相分析,并运用扫描电镜分析材料的微观结构,用差热分析仪测定反应温度。结果表明,Ti∶Si∶C=0.42∶0.23∶0.35时,可制得纯度较高的Ti3SiC2-SiC复合材料块体,只含有极少量的TiSi2杂质。Ti3SiC2晶粒无特定的生长方向,平均长度在10μm以下,厚度小于5μm。略高的Si含量有利于获得纯度较高的Ti3SiC2-SiC复合材料。 Ti3SiC2-SiC composites bulk were fabricated by pressureless sintering of Ti,Si and graphite powders.X-ray diffraction and scanning electron microscopy were utilized for the phase identification and the microstructure of the composites.The reaction temperature was measured by a differential scanning calorimeter.Results show that when a composition of Ti∶Si∶C = 0.42∶0.23∶0.35 was used,high purity Ti3SiC2-SiC composite can be obtained with neglegible amout of TiSi2 as impurity.The grains of Ti3SiC2,which have no specific growth direction,have an average size of less than 10μm in length and 5μm in thickness.A small excess of silicon in the starting materials can increase the purity of the prepared Ti3SiC2-SiC composites.

关 键 词： 复合材料 无压烧结

领　　域： [化学工程] [化学工程]