作　　者： ; ; ; ; ;

机构地区： 广东工业大学材料与能源学院

出　　处： 《材料热处理学报》 2001年第3期62-66,共5页

摘　　要： 研究了脉冲偏压对真空电弧沉积TiN薄膜组织与性能的影响。结果表明脉冲偏压幅值在50 0～ 1 70 0V ,脉宽比在 1 2 5～ 2 5的范围内 ,沉积温度低于 2 50℃时膜层组织主要由Ti2 N和TiN相构成 ,随脉冲偏压幅值和脉宽比的增大 ,晶面的择尤沉积由Ti2 N( 2 0 0 )向 ( 0 0 2 )转变 ,柱状晶生长程度减弱。膜层具有较高的显微硬度和耐磨性 ,但在过高的脉冲偏压和脉宽比的沉积条件下 ,膜层的性能有下降的趋势。 The influence of pulse bias voltage on the microstructure and properties of TiN films deposited by vacuum arc were studied.Results showed that the deposition temperature was under 250℃ when the height of pulse bias voltage was 500～1700V,and the ratio of pulse width was 1/25～2/5.The films consisted of Ti 2N and TiN phases.The priority orientation of Ti 2N changed from (200) to (002) when the pulse bias voltage and ratio of pulse width increased,while the degree of columnar growth of the deposition films reduced.The films had high microhardness and good wear resistance,but the properties tended to decrease when pulse bias voltae and ratio of pulse width were higher.

关 键 词： 脉冲偏压 真空电弧沉积 薄膜 组织性能

领　　域： [金属学及工艺] [金属学及工艺]