作　　者： ; ; ; ; ; ;

机构地区： 暨南大学

出　　处： 《无机化学学报》 2004年第3期247-250,235,共5页

摘　　要： 本文研究了Cd2Ge7O16∶Tb3+材料的发光及其长余辉性质。指出Tb3+的发光是该离子的5D3鄄7FJ、5D4鄄7FJ两种跃迁产生的;随着掺杂浓度的增加5D4鄄7FJ跃迁增强,发光颜色由蓝变绿。并把该材料的长余辉性质归结为基质结构中有电子陷阱和空穴陷阱。提出余辉机理模型。 Luminescence and long afterglow property of Cd2Ge7O16:Tb3+ are investigated in the paper. It is shown that luminescence of Cd2Ge7O16:Tb3+ is due to the 5D3-7FJ, 5D4-7FJ transitions of Tb3+ ions. With the increasing of Tb3+ concentration, the intensity of the 5D3-7FJ emission is decreased, while the intensity of the 5D4-7FJ emission is increased. The color of Cd2Ge7O16:Tb3+ is becoming green increasely. Long afterglow property of Cd2Ge7O16:Tb3+ is due to the electron trap and hole trap of Cd2Ge7O16:Tb3+. We ...

关 键 词： 长余辉 发光机理

领　　域： [理学] [理学]